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  rf & microwave transistors avionics applications .400 x .500 2lfl (s038) hermetically sealed . refractory\gold metallization . ruggedized vswr 25:1 . internal input/output matching . low thermal resistance . metal/ceramic hermetic package . p out = 450 w min. with 7.0 db gain description the MSC81450M device is a high power pulsed transistor specifically designed for iff avionics applications. this device is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions. the MSC81450M is housed in the unique big- pac ? package with internal input/output match- ing structures. pin connection branding 81450m order code MSC81450M absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* 910 w i c device current* 28 a v cc collector-supply voltage* 55 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 0.15 c/w *applies only to rated rf amplifier operation MSC81450M 1. collector 3. emitter 2. base 4. base thermal data april 7, 1995 1/3
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1090 mhz p in = 90 w v cc = 50 v 450 500 w h cf = 1090 mhz p in = 90 w v cc = 50 v 40 % g p f = 1090 mhz p in = 90 w v cc = 50 v 7.0 db note: pulse width = 10 m sec duty cycle = 1% static symbol test conditions value unit min. typ. max. bv cbo i c = 15ma i e = 0ma 65 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer i c = 50ma r be = 10 w 65 v i ces v ce = 50v 35ma h fe v ce = 5v i c = 1a 15 120 dynamic all dimensions are in inches. ref.: dwg. no. c125363 test circuit MSC81450M april 7, 1995 2/3
package mechanical data ref.: dwg. no. 12-0212 rev. a information furnished is believed to be accurate and reliable. however, sgs-thomson microelectron ics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectron- ics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replac es all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in lif e support devices or systems without expr ess wri tten approval of sgs-thomson microelectronics. ?1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectron ics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. MSC81450M april 7, 1995 3/3


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